
TPC8127
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC8127
General Description
Lithium Ion Battery Applications
Power Management Switch Applications
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 5 mΩ (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5mA)