TPC8107 P-Channel Mosfet

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications

Small footprint due to small and thin package
Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
High forward transfer admittance: |Yfs| = 31 S (typ.)
Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

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A18