FDS4435BZ P-Channel MOSFET

FDS4435BZ
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20m
Features
Max rDS(on) = 20m at VGS = -10V, ID = -8.8A
Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A
Extended VGSS range (-25V) for battery applications
HBM ESD protection level of ±3.8KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
Termination is Lead-free and RoHS compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.

DATASHEET

A10